電子工程學系電子研究所

由 P Singh 著作 · 2020 — Abstract. This work models high current snapback behavior in n-FET transistors with bottom body contact under high current stress at the ...

2023年12月15日 — The snapback phenomenon is observed in NMOS devices when inversion carriers, i.e., electrons in the channel, gain sufficient kinetic energy to ...

由 Y Fong 著作 · 1990 · 被引用 24 次 — Abstract-The high-current snapback characteristics of MOSFET's with different channel lengths and widths, gate oxide thicknesses, and.

Snapback is a mechanism in a bipolar transistor in which avalanche breakdown or impact ionization provides a sufficient base current to turn on the ...

2019年1月5日 — Snapback ESD protection devices behave differently. The typical MOSFET has a parasitic bipolar junction transistor which has a source as its ...

由 T Skotnicki 著作 · 1991 · 被引用 2 次 — Abstract. This paper analyses the phenomenon of snapback (negative resistance portion of the output characteristic) in MOSFETs. It shows that the expansion of ...

由 溫詠儒 著作 · 2009 — NMOS transistor have obvious snapback characteristic, while the snapback of PMOS ... MOSFET. In chapter three, all works use ballast technique without silicied ...

下面我们继续从寄生三极管的电性来探讨栓锁效应(Latch-up)发生的条件，有助于我们理解如何降低栅锁效应，或者如何实时触发栅锁效应来达到ESD保护的作用。

由 溫詠儒 著作 · 2009 — NMOS transistor have obvious snapback characteristic, while the snapback of PMOS ... MOSFET. In chapter three, all works use ballast technique without silicied ...